A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• multifaceted instrument enabling a broad range of applications beyond imaging in which the finely focused helium ion beam is used for a variety of defect engineering, ion implantation, and nanofabrication tasks. Operation of the ion source with neon has extended the reach of this technology even further. This

• ; focused helium ion beam-induced deposition; focused helium ion beam milling; helium ion beam lithography; helium ion implantation; Introduction Since the helium ion microscope (HIM) was introduced 15 years ago [1][2][3], over one hundred HIMs have been installed worldwide and over one thousand research

• comprising an arrangement of discs of 100 nm diameter with a pitch of 200 nm were irradiated, demonstrating the capability of the focused helium ion beam method to achieve magnetic property engineering in the form of a nanoscale periodic array. In follow-up work, consistent magnetization reversal for all

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

• Serguei Chiriaev,
• Luciana Tavares,
• Vadzim Adashkevich,
• Arkadiusz J. Goszczak and
• Horst-Günter Rubahn

Beilstein J. Nanotechnol. 2020, 11, 1693–1703, doi:10.3762/bjnano.11.151

• irradiation-induced mechanical strain in the patterning process are elaborated and discussed. Keywords: direct patterning; focused helium ion beam; out-of-plane nanopatterning; polymers; thin films; Introduction Micro- and nanofabrication with focused ion beams (FIBs) is currently a subject of strong

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• study of the electrical performance of chemically synthesized monolayer molybdenum disulfide (MoS2) field-effect transistors irradiated with a focused helium ion beam as a function of increasing areal irradiation coverage. We determine an optimal coverage range of approx. 10%, which allows for the

An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

• Santiago H. Andany,
• Gregor Hlawacek,
• Stefan Hummel,
• Charlène Brillard,
• Mustafa Kangül and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2020, 11, 1272–1279, doi:10.3762/bjnano.11.111

• fabrication capabilities of the HIM [33] and studying these local defects created at the micro- and nanoscale can provide valuable information towards understanding these limitations. For example, a focused helium ion beam can locally destroy the crystalline structure of silicon and lead to the growth of

• amorphous silicon bubbles at the surface [34]. Furthermore, focused helium ion beam exposure inside a HIM can be used as a way of locally replicating the harsh radiation conditions found in nuclear fission and fusion reactors, to study the response of structural materials used in the reactors [35]. We

Focused particle beam-induced processing

• Michael Huth and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2015, 6, 1883–1885, doi:10.3762/bjnano.6.191

• direction, Yuri Petrov and Oleg Vyvenko have exploited reflected helium ions for high-resolution imaging with “chemical contrast” [11]. Hongzhou Zhang and coworkers have utilized a focused helium ion beam to modify and mill thin silicon foils [12], which constitutes pioneering work in HIM towards

Scanning reflection ion microscopy in a helium ion microscope

• Yuri V. Petrov and
• Oleg F. Vyvenko

Beilstein J. Nanotechnol. 2015, 6, 1125–1137, doi:10.3762/bjnano.6.114

• -SE conversion was used for the detection of backscattered electrons in SEM [36] and for scanning transmission mode in HIM [37]. A schematic of the originally developed RI detection system is shown in Figure 1. The sample (1) was mounted on a stage at a grazing angle relative to the focused helium ion

• beam. The reflected helium ions were directed to the Pt-coated plate (2) which served as the main RI-to-SE converter. Platinum was chosen because of its high SE yield under He-ion excitation [12]. The SE signal was measured by a conventional Everhart–Thornley (ET) detector (3). The sample was

Nano-structuring, surface and bulk modification with a focused helium ion beam

• Daniel Fox,
• Yanhui Chen,
• Colm C. Faulkner and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2012, 3, 579–585, doi:10.3762/bjnano.3.67

• focused helium ion beam to selectively modify and mill materials. The sub nanometer probe size of the helium ion microscope used provides lateral control not previously available for helium ion irradiation experiments. At high incidence angles the helium ions were found to remove surface material from a

• focused helium ion beam can modify a surface’s physical properties, such as crystallinity, roughness and thickness, in a controlled manner. 35 keV helium ions were used to produce a surface which was smoother than could be achieved by 30 keV FIB. Low energy FIB polishing can also improve the lamella